DocumentCode
1662667
Title
Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components
Author
Fruchier, O. ; Notingher, P., Jr. ; Agnel, S. ; Toureille, A. ; Forest, F. ; Cunningham, S. ; Rousset, B. ; Sanchez, J.L.
Author_Institution
Univ. of Montpellier 2, Montpellier
fYear
2007
Firstpage
444
Lastpage
451
Abstract
This work is concerned with the development of a non destructive method for measuring electric charge in metal-oxide-semiconductor (MOS) components and devices. The aim is to obtain further information on microelectronics and power electronics components and, using the gate oxide state, to assess semiconductors health. Results obtained on MOS samples with oxide thicknesses of 2 nm, 50 nm and 120 nm, and on power electronics modules are presented.
Keywords
MOSFET; charge measurement; semiconductor device measurement; MOS components; electric charge characterization; nondestructive method; power electronics modules; semiconductors health assessment; size 120 nm; size 2 nm; size 50 nm; thermal step method; Aging; Circuits; Copper; Insulated gate bipolar transistors; Insulation; Microelectronics; Power electronics; Power system reliability; Power system security; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location
New Orleans, LA
ISSN
0197-2618
Print_ISBN
978-1-4244-1259-4
Electronic_ISBN
0197-2618
Type
conf
DOI
10.1109/07IAS.2007.72
Filename
4347821
Link To Document