DocumentCode :
1662809
Title :
Highly efficient cross-linked PbS nanocrystal/C60 hybrid heterojunction photovoltaic cell
Author :
Tsang, S.W. ; Fu, H. ; Wang, R. ; Lu, J. ; Yu, K. ; Tao, Y.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
fYear :
2010
Firstpage :
608
Lastpage :
609
Abstract :
We present a highly efficient hybrid heterojunction photovoltaic (PV) cell with a colloidal inorganic nanocrystal (NC) electron donor and an organic electron acceptor. The heterojunction is formed by a thin film of cross-linked PbS NCs and a C60 layer. Compared to the PbS-only PV cell, the heterojunction device has improved the power conversion efficient (PCE) from 1.6 % to 2.2 %. The C60 layer effectively prevents the excitons from quenching at the NC/metal interface, which is demonstrated with a significant improvement of the fill-factor (FF) of the heterojunction devices. In addition, a larger open-circuit voltage (VOC) in the heterojunction devices suggests that the electrons in C60 can readily transfer to the PbS NCs through the NC surface linkers. This is supported by the measured optical absorption spectrum of the hybrid system.
Keywords :
IV-VI semiconductors; colloidal crystals; excitons; fullerenes; lead compounds; nanostructured materials; organic-inorganic hybrid materials; power conversion; radiation quenching; semiconductor heterojunctions; semiconductor thin films; solar cells; thin film devices; NC-metal interface; PbS-C60; colloidal inorganic nanocrystal; cross-linked nanocrystal; electron donor; excitons; heterojunction device; hybrid heterojunction photovoltaic cell; hybrid system; open-circuit voltage; optical absorption spectrum; organic electron acceptor; power conversion efficient; quenching; thin film; Electron optics; Excitons; Heterojunctions; Nanocrystals; Optical films; Photovoltaic systems; Power conversion; Solar power generation; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424746
Filename :
5424746
Link To Document :
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