A novel dual-channel body-tied MOSFET with self-aligned structure for analog/RF applications

In this study, we propose a novel bulkSi-based device called dual-channel body-tied (DCBT) MOSFET using the self-aligned process without any extra masks. It reveals that our proposed DCBT FET has excellent S.S., decreased I_sd,leak, lower R_sd, reduced J_g,limit, smaller lattice temperature, and higher thermal stability when compared with its DC counterpart. And, for the first time, we will investigate the analog/RF performance of our proposed DCBT FET. According to the numerical simulation results, the BT scheme can gain the excellent RF performances, increased r_O (+53%) and higher f_T (+20%), compared with a non-BT scheme.