Title :
Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment
Author :
Lee, C.S. ; Yang, S.H. ; Hung, J.T. ; Chien, W.T. ; Lin, M.Y. ; Liao, Y.H. ; Tseng, L.Y. ; Hsu, W.-C. ; Ho, C.S. ; Chou, B.Y. ; Lai, Y.N.
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36)%, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; oxidation; power HEMT; AlGaAs-InGaAs; MOS-pHEMT; ozone water oxidation treatment; power-added-efficiency; pseudomorphic high electron mobility transistor; superior device characteristics; Annealing; Indium; Indium gallium arsenide; Indium phosphide; Logic gates; Nickel; Oxidation; MOS-pMHEMT; P.A.E.; ozone water oxidation;
Conference_Titel :
Next-Generation Electronics (ISNE), 2010 International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-6693-1
DOI :
10.1109/ISNE.2010.5669168
