To achieve a novel weak snapback characteristic in the high voltage nLDMOS

A drain-side engineering to LDMOS by doping concentration and length modulations of the N-type adaptive layer to obtain weak snapback characteristic nLDMOS are presented in this work. It´s a novel method to reduce trigger voltage(V_t1) and to increase holding voltage(V_h). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage, holding voltage and R_on resistance distribution of these novel HV nLDMOS devices.