Title :
Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET
Author :
Wang, Wei-Chin ; Chang, Shu-Tong ; Hsieh, Bing-Fong
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
Subband structure and effective mass of strained SiGe (110) inversion layer in PMOSFET are studied theoretically in this study. The strain conditions considered include the intrinsic stress resulting from growing the various composition of SiGe alloy layers on the (110) Si substrate. The quantum confinement effect resulting from the surface induced electric field in the interface is incorporated in the k.p calculation. The change of constant energy surface due to strain effects are calculated for subband structure. The density of states effective mass, mC, the conductivity mass, m¿, and the quantization effective mass(mz) of the channel in the [110] direction of strained SiGe (110) inversion layer for PMOS under substrate strain and various surface induced electric field strengths are all investigated.
Keywords :
Ge-Si alloys; MOSFET; effective mass; elemental semiconductors; internal stresses; inversion layers; silicon; PMOSFET; Si; SiGe; conductivity mass; constant energy surface; intrinsic stress; k.p calculation; quantization effective mass; quantum confinement effect; strain conditions; strain effects; strained SiGe(110) inversion layer; subband structure; substrate strain; surface induced electric field strengths; Capacitive sensors; Conductivity; Effective mass; Germanium silicon alloys; MOSFET circuits; Potential well; Quantization; Silicon alloys; Silicon germanium; Stress;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424761
