DocumentCode
1663309
Title
Modeling of temperature sensor built on GaN nanostructures
Author
Asgari, Asghar
Author_Institution
Photonics Group, Univ. of Tabriz, Tabriz, Iran
fYear
2010
Firstpage
596
Lastpage
597
Abstract
Based on the minority-carrier exclusion theory, a model is developed to explain the operating of GaN nanostructure based temperature sensors. The model takes into account different carrier mobility mechanisms. The modeling results show that the resistance of sensor strongly are dependent on GaN doping density and the length of sensor.
Keywords
III-V semiconductors; carrier mobility; gallium compounds; minority carriers; nanostructured materials; semiconductor device models; semiconductor doping; temperature sensors; wide band gap semiconductors; GaN; carrier mobility mechanisms; doping density; minority-carrier exclusion theory; nanostructures; sensor length; sensor resistance; temperature sensor modeling; Aerospace electronics; Doping; Electric resistance; Gallium nitride; Nanostructures; Semiconductor process modeling; Temperature distribution; Temperature sensors; Thermal resistance; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424764
Filename
5424764
Link To Document