Title :
Modeling of temperature sensor built on GaN nanostructures
Author_Institution :
Photonics Group, Univ. of Tabriz, Tabriz, Iran
Abstract :
Based on the minority-carrier exclusion theory, a model is developed to explain the operating of GaN nanostructure based temperature sensors. The model takes into account different carrier mobility mechanisms. The modeling results show that the resistance of sensor strongly are dependent on GaN doping density and the length of sensor.
Keywords :
III-V semiconductors; carrier mobility; gallium compounds; minority carriers; nanostructured materials; semiconductor device models; semiconductor doping; temperature sensors; wide band gap semiconductors; GaN; carrier mobility mechanisms; doping density; minority-carrier exclusion theory; nanostructures; sensor length; sensor resistance; temperature sensor modeling; Aerospace electronics; Doping; Electric resistance; Gallium nitride; Nanostructures; Semiconductor process modeling; Temperature distribution; Temperature sensors; Thermal resistance; Wide band gap semiconductors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424764
