DocumentCode :
1663447
Title :
The model of nano-scale copper particles removal from silicon surface in high pressure CO2+H2O and CO2+H2O+IPA cleaning solutions
Author :
Tan, Xin ; Chai, Jiajue ; Zhang, Xiaogang ; Chen, Jiawei
Author_Institution :
Dept. of Chem., Renmin Univ. of China, Beijing, China
fYear :
2010
Firstpage :
592
Lastpage :
593
Abstract :
This study focuses on the description of static forces in a system with a fluid phase entrapped between nano-scale particles and a surface. Equilibrium separation distance (EDS) and net adhesion force (NAF) of a particle adhering on substrate can be used as the guideline for evaluating extend of the particle cleaning. Calculations demonstrate that pressure can significantly alter the static force balance of an adhered particle on substrate, i.e., increasing the pressure of the cleaning system decreases the NAF between spherical copper particle and silicon surface entrapped with medium. The value of NAF decreases and that of ESD increases with increased pressure as the submersion height of a particle is given. The NAF (or ESD) of a particle on substrate turns to small (or large) as IPA is added into CO2-H2O system, suggesting that adding IPA in CO2-H2O system has the potential to facilitate particle disengagement from surface. For particles with different dimension under high pressure, the NAF is nearly same as the submersion height is given, and the ESD increases with increased particle radius, which means that the particle with larger dimension can be removed more easily.
Keywords :
adhesion; carbon compounds; copper; elemental semiconductors; nanoparticles; phase separation; silicon; surface cleaning; water; CO2-H2O; Cu; Si; cleaning solutions; equilibrium separation distance; fluid phase; nanoscale copper particles; net adhesion force; particle disengagement; particle radius; silicon surface; silicon surface entrapment; static forces; Adhesives; Bridges; Cleaning; Copper; Electrostatic discharge; Guidelines; Microscopy; Pressure effects; Silicon; Solvents;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424770
Filename :
5424770
Link To Document :
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