Local structure investigation of Indium Oxynitride thin films by X-ray absorption fine structure

Indium oxynitride (InON) thin films prepared by reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In₂O₃) and indium nitride (InN) phase.