DocumentCode :
1663590
Title :
NO gas sensing properties of ZnO wire-like thin films synthesized by thermal oxidation of sputtered Zn metallic films in air
Author :
Le Hung, Nguyen ; Ahn, Eunseong ; Jung, Hooncheol ; Kim, Hyojin ; Hong, Soon-Ku ; Kim, Dojin
Author_Institution :
Dept. of Mater. Sci. & Eng., Chungnam Nat. Univ., Daejeon, South Korea
fYear :
2010
Firstpage :
448
Lastpage :
449
Abstract :
We investigated the NO gas sensing properties of the ZnO wire-like films synthesized by thermal oxidation of sputtered Zn metallic films in dry air. Morphological characterization revealed that we synthesized polycrystalline wurtzite ZnO films of a wire-like nanostructure with a width of 100-150 nm and a length of several microns. It was found from the gas sensing measurements that the ZnO wire-like films showed a significantly high sensitivity with a maximum sensitivity of 57.6 for 2 ppm NO at 200°C as well as a reversible fast response to NO with a very low detection limit of 50 ppb. These results suggest that the ZnO wire-like films can be used as the gas sensing materials for low-cost and high-performance NO gas sensors.
Keywords :
II-VI semiconductors; crystal morphology; gas sensors; nanostructured materials; nitrogen compounds; oxidation; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; NO; ZnO; dry air; gas sensors; morphological characterization; polycrystalline wurtzite; sputtered Zn metallic films; temperature 200 degC; thermal oxidation; wire like nanostructure; wire like thin films; Crystallization; Gas detectors; Nanostructured materials; Oxidation; Semiconductivity; Sputtering; Temperature sensors; Thermal engineering; Thin film sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424774
Filename :
5424774
Link To Document :
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