• DocumentCode
    1663590
  • Title

    NO gas sensing properties of ZnO wire-like thin films synthesized by thermal oxidation of sputtered Zn metallic films in air

  • Author

    Le Hung, Nguyen ; Ahn, Eunseong ; Jung, Hooncheol ; Kim, Hyojin ; Hong, Soon-Ku ; Kim, Dojin

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Chungnam Nat. Univ., Daejeon, South Korea
  • fYear
    2010
  • Firstpage
    448
  • Lastpage
    449
  • Abstract
    We investigated the NO gas sensing properties of the ZnO wire-like films synthesized by thermal oxidation of sputtered Zn metallic films in dry air. Morphological characterization revealed that we synthesized polycrystalline wurtzite ZnO films of a wire-like nanostructure with a width of 100-150 nm and a length of several microns. It was found from the gas sensing measurements that the ZnO wire-like films showed a significantly high sensitivity with a maximum sensitivity of 57.6 for 2 ppm NO at 200°C as well as a reversible fast response to NO with a very low detection limit of 50 ppb. These results suggest that the ZnO wire-like films can be used as the gas sensing materials for low-cost and high-performance NO gas sensors.
  • Keywords
    II-VI semiconductors; crystal morphology; gas sensors; nanostructured materials; nitrogen compounds; oxidation; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; NO; ZnO; dry air; gas sensors; morphological characterization; polycrystalline wurtzite; sputtered Zn metallic films; temperature 200 degC; thermal oxidation; wire like nanostructure; wire like thin films; Crystallization; Gas detectors; Nanostructured materials; Oxidation; Semiconductivity; Sputtering; Temperature sensors; Thermal engineering; Thin film sensors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424774
  • Filename
    5424774