Title :
Synthesis and characterization of semiconductive In2O3 hollow particles
Author :
Tzu-Tsung Tseng ; Tseng, Tzu-Tsung
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
A novel and facile synthesis route has been developed to prepare semiconductive In2O3 particles with hollow interiors and microporous shell structures. From the etching profile of XPS analysis, ¿implantation¿ of indium species into the polymeric templates occurs in C2Cl4 solvent, forming particles with a core-shell structure. Upon calcinations to 600°C, polycrystalline In2O3 hollow particles with a narrow particle-size distribution and a non-aggregating character are formed. Specific surface area and pore structure on the shells of the hollow particles can be tailored to a significant extent by changing process variables such as precursor concentration. Structure and electric properties of the In2O3 hollow particles are examined by TEM/SEM, BET, UV-vis., and FT-IR.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; calcination; indium compounds; infrared spectra; nanofabrication; nanoparticles; nanoporous materials; particle size; porosity; scanning electron microscopy; semiconductor growth; transmission electron microscopy; ultraviolet spectra; visible spectra; FTIR spectra; In2O3; SEM; TEM; UV-vis spectra; XPS; calcination; core-shell structure; electric properties; etching profile; indium species implantation; microporous shell structures; nonaggregating character; particle size distribution; polycrystalline hollow particles; pore structure; semiconductive hollow particles; temperature 600 degC; Calcination; Etching; Implants; Indium; Optical films; Photonic band gap; Polymers; Shape; Solvents; Structural shells;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424776
