• DocumentCode
    1663738
  • Title

    Study of junctionless pseudo tri-gate vertical MOSFETs for RF/analog applications

  • Author

    Chang, Yu-Che ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chen, Cheng-Hsin ; Lu, Kuan-Yu ; Tai, Chih-Hsuan ; Fan, Yi-Hsuan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2010
  • Firstpage
    93
  • Lastpage
    95
  • Abstract
    In this study, junctionless technology employed for fabricating pseudo tri-gate vertical (PTGV) MOSFETs is proposed and the RF/analog performance is also investigated and demonstrated. According to simulation results, the excellent performances such as high transconductance (gm), high cut-off frequency (fτ), and high transconductance generation factor (gm/Id) arc achieved. The numerical results also provide a prediction of an 8nm gate length PTGV and JPTGV for RF applications.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; JPTGV MOSFET; RF-analog application; cut-off frequency; junctionless pseudo tri-gate vertical MOSFET; size 8 nm; transconductance generation factor; Logic gates; Radio frequency; Substrates; RF/analog; junctionless; pseudo tri-gate vertical MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2010 International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4244-6693-1
  • Type

    conf

  • DOI
    10.1109/ISNE.2010.5669190
  • Filename
    5669190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1663738