DocumentCode :
1663850
Title :
Characteristics of GaN-based Photonic crystal surface emitting lasers with central defects
Author :
Wu, Tzeng-Tsong ; Weng, Peng-Hsiang ; Hou, Yen-Ju ; Lu, Tien-Chang
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; optical fabrication; photonic crystals; quantum well lasers; surface emitting lasers; wide band gap semiconductors; GaN; PCSEL; central defects; photonic crystal surface emitting lasers; Distributed feedback devices; Laser excitation; Laser feedback; Lattices; Photonic crystals; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326034
Link To Document :
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