• DocumentCode
    1663850
  • Title

    Characteristics of GaN-based Photonic crystal surface emitting lasers with central defects

  • Author

    Wu, Tzeng-Tsong ; Weng, Peng-Hsiang ; Hou, Yen-Ju ; Lu, Tien-Chang

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results.
  • Keywords
    III-V semiconductors; gallium compounds; laser cavity resonators; optical fabrication; photonic crystals; quantum well lasers; surface emitting lasers; wide band gap semiconductors; GaN; PCSEL; central defects; photonic crystal surface emitting lasers; Distributed feedback devices; Laser excitation; Laser feedback; Lattices; Photonic crystals; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1663850