Title :
Design and Development of New Robust 3.3kV IGBT and FWD Module Chips
Author :
Donlon, John F. ; Motto, Eric R. ; Iura, Shinichi
Author_Institution :
Powerex, Inc., Youngwood
Abstract :
High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3kV level, a new IGBT and free-wheeling diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi method experiments to find the most influential design factors and to secure the most robust design.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; Taguchi method; free-wheeling diode chip; high voltage insulated gate bipolar transistors; voltage 3.3 kV; Chip scale packaging; Design optimization; Industrial relations; Insulated gate bipolar transistors; Motor drives; Performance loss; Robustness; Semiconductor optical amplifiers; Short circuit currents; Voltage;
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/07IAS.2007.117
