DocumentCode
1663966
Title
Analysis of the effects of cross-field defocus on the photolithographic process window
Author
Pelligrini, Joseph C. ; Sager, Craig B.
Author_Institution
New Vision Syst. Inc., USA
fYear
1994
Firstpage
319
Abstract
Summary form only given. The focus-exposure process window has become an accepted standard for the characterization of stability of a photolithographic process. The process window is defined as a rectangular region in the focus-exposure plane where the process of interest is considered to perform within specifications (typically ±10% of target CD). The width of the box identifies the depth-of-focus and the box height represents the exposure latitude. Recent studies (Capsuto SPIE 1992, et al.) have shown that the defocus conditions that exist across a typical stepper exposure field can significantly impact DC performance. The proper characterization of the true process performance requires analysis of the common process window or “common corridor” which takes into account variable conditions that exist in non-laboratory environments. This study utilized a defocus map for a state of the art I-line stepper, obtained using an innovative focus monitor based on phase-shift mask technology. This defocus map was used to derive sampling plans for both real and simulated analysis based on the common corridor technique. This method resulted in a highly realistic estimate of the photolithographic process stability
Keywords
photolithography; I-line stepper; common corridor technique; cross-field defocus; focus-exposure process window; phase-shift mask; photolithographic process; stability; Analytical models; Machine vision; Manufacturing processes; Performance analysis; Sampling methods; Semiconductor device manufacture; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-2053-0
Type
conf
DOI
10.1109/ASMC.1994.588288
Filename
588288
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