Electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial films grown on Si substrates

Epitaxially grown PMN-PT thin films using the PMN-PT single crystal targets were prepared at 550°C on appropriate buffer layers of LSCO/CeO₂/YSZ deposited on a Si substrate using pulsed laser deposition. The micro-structural and the electrical properties of the films were investigated as a function of the film thickness. The PMN-PT films with the thickness from 20 to 600 nm exhibited an epitaxial nature with a pure perovskite structure. On the other hand, the films above 700 nm included a pyrochlore phase embedded in the perovskite structure although they exhibited an epitaxial nature. A pyrochlore phase included in the films above 700 nm thickness decreased the dielectric constant and the ferroelectric properties of the PMN-PT films.