Title :
Numerical analysis of destruction modes in IGBT chips
Author :
Knipper, U. ; Pfirsch, F. ; Raker, T. ; Niedermeyr, J. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Tech. Univ. Munich, Munich, Germany
Abstract :
In IGBTs avalanche breakdown usually sets on in the edge termination structure. In consequence of electrical crosstalk, the destruction mechanism in very thin devices is confined to the neighboring cells in the active part of the chip. Thus, in order to achieve the largest possible safe-operating area, design optimization has to focus on the edge termination structure and the neighboring active cells in its vicinity.
Keywords :
avalanche breakdown; insulated gate bipolar transistors; numerical analysis; power semiconductor devices; semiconductor device noise; semiconductor device reliability; IGBT chips; avalanche breakdown; destruction modes; edge termination structure; electrical crosstalk; insulated gate bipolar transistors; neighboring active cells; numerical analysis; Avalanche breakdown; Breakdown voltage; Computational modeling; Current measurement; Doping profiles; Insulated gate bipolar transistors; Numerical analysis; Physics; Robustness; Uniform resource locators; IGBT; bipolar device; discrete power device; reliability; robustness;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
