A new circuit model of multi-quantum well Vertical-Cavity Surface-Emitting Lasers

In this paper, a new high order circuit model of multi-quantum well vertical-cavity surface-emitting Lasers (VCSEL) based on a modified rate-equation is presented. This model is accounts for both thermal and spatial dependences of VCSEL characteristics. A new logarithmic relation of optical gain on carrier density substitutes for the linear relation in the conventional rate equation for quantum well lasers. A four-term Bessel-series expansion for the VCSEL carrier number is utilized to achieve good accuracy. A zero-order Laguerre-Guassian beam is utilized for describing the photo distribution to simplify the computation. This model can be readily used in SPICE-like circuit simulators. Numerical examples are introduced to replicate the multi-quantum well VCSEL´s typical dc, Small-signal and transient operation, including temperature-dependent light-current (LI) curves, modulation responses, and diffusive turn-off transients. Furthermore, we verify our model against other lower order model from reported in the literature.