DocumentCode :
1664100
Title :
A high-bandwidth high-power inverter
Author :
Sabate, Juan ; Rivas, Juan M. ; Szczesny, Paul ; Stevanovic, Ljubisa
Author_Institution :
One Res. Circle, Gen. Electr. Global Res. Center, Niskayuna, NY, USA
fYear :
2009
Firstpage :
1
Lastpage :
9
Abstract :
This paper presents experimental results for the design of a high power voltage fed inverter and discusses the benefits of two technologies used in its implementation. The inverter design presented here finds application in procedures requiring accurate control of large fast-varying currents with minimal error. In the context of a 1 MVA voltage fed inverter, we experimentally demonstrate the advantages of .combining high performance power modules with advanced cooling technologies. The power devices used combine conventional silicon IGBT´s with Silicon Carbide Schottky antiparallel diodes dramatically reducing switching losses in the system.
Keywords :
Schottky diodes; insulated gate bipolar transistors; invertors; IGBT; Schottky antiparallel diodes; SiC; advanced cooling technologies; apparent power 1 MVA; high performance power modules; high power voltage fed inverter; high-bandwidth high-power inverter; power devices; Bandwidth; Bridge circuits; Inverters; Multichip modules; Schottky diodes; Semiconductor diodes; Silicon carbide; Switching loss; Temperature; Voltage; High bandwidth inverter; High fidelity inverter; High power SiC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
Type :
conf
Filename :
5278873
Link To Document :
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