Title :
Indirect thermal measurement on SIC JFET transistors
Author :
Moumen, Sabrine ; Lefebvre, Stéphane ; Khatir, Zoubir ; Faugières, Jean-Claude
Author_Institution :
SATIE CNAM, UniverSud, Cachan, France
Abstract :
Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module.
Keywords :
junction gate field effect transistors; silicon compounds; temperature measurement; temperature sensors; SiC JFET transistors; indirect temperature sensors; indirect thermal measurement; junction temperature estimation; thermal impedance; thermal indicators; Aging; Delamination; Impedance; Multichip modules; Packaging; Silicon carbide; Substrates; Temperature sensors; Thermal degradation; Thermal resistance; JFET; SiC; reliability; temperature estimation; thermal impedance;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
