Title :
SOS-based pulsed power: development and applications
Author :
Rukin, S.N. ; Mesyats, G.A. ; Darznek, S.A. ; Lyubutin, S.K. ; Ponomarev, A.V. ; Slovikovsky, B.G. ; Timoshenkov, S.P. ; Bushlyakov, A.I. ; Tsiranov, S.N.
Author_Institution :
Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia
Abstract :
This paper summarizes recent results of the study and development of high-power nanosecond generators employing a semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on nanosecond interruption of super-density currents in semiconductor diodes (SOS-effect), are discussed. Advances with SOS-diodes, which represent new high-voltage devices for nanosecond interruption of high-density currents, are discussed. The semiconductor structure of the SOS-diodes is compared with the structure of soft- and hard-recovery high-voltage rectifier diodes. The physical processes that occur in the semiconductor structure during pumping and interruption of the current are considered. SOS-generators having the output voltage from 0.1 to 1 MV, the pulse repetition frequency from 0.1 to 5 kHz, and the average output power of units to tens of kW, are described. Application of the SOS-generators is exemplified.
Keywords :
power semiconductor diodes; power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; 0.1 to 1 MV; 0.1 to 5 kHz; applications; development; high-density currents; high-power nanosecond generators; high-voltage rectifier diodes; nanosecond interruption; operating principle; pulsed power; semiconductor diodes; semiconductor opening switch; semiconductor structure; super-density currents; Conductors; Current density; Electronic switching systems; Nanoscale devices; P-n junctions; Power generation; Power semiconductor switches; Semiconductor diodes; Standards development; Voltage;
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
DOI :
10.1109/PPC.1999.825435
