DocumentCode :
1664580
Title :
Light emission in Ge quantum wells
Author :
Fei, Edward T. ; Huo, Yijie ; Shambat, Gary ; Chen, Xiaochi ; Liu, Xi ; Claussen, Stephanie A. ; Edwards, Elizabeth H. ; Kamins, Theodore I. ; Miller, David A B ; Vuckovic, Jelena ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
We present the Ge/SiGe quantum well structure as a strong candidate for CMOS compatible light source. Photoluminescence and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk resonators.
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; germanium; light sources; optical resonators; photoluminescence; semiconductor quantum wells; CMOS compatible light source; Ge-SiGe; disk resonators; electroluminescence; light emission; optical properties; photoluminescence; quantum wells; Electroluminescence; Optical buffering; Optical interconnections; Photoluminescence; Silicon; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326064
Link To Document :
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