Title :
A 32nm high-k metal gate application processor with GHz multi-core CPU
Author :
Yang, Se-Hyun ; Lee, Seogjun ; Lee, Jae Young ; Cho, Jeonglae ; Lee, Hoi-Jin ; Cho, Dongsik ; Heo, Junghun ; Cho, Sunghoon ; Shin, Youngmin ; Yun, Sunghee ; Kim, Euiseok ; Cho, Ukrae ; Pyo, Edward ; Park, Man Hyuk ; Son, Jae Cheol ; Kim, Chinhyun ; Youn,
Author_Institution :
Samsung Electron., Yongin, South Korea
Abstract :
Samsung´s next-generation 32nm dual/quad-core Exynos™ processor integrates 2 or 4 ARM-v7A architecture cores, a 2-port DRAM controller and numerous multimedia accelerators and connectivity blocks on the same die. It is an application processor (AP) designed to cover a wide variety of mobile applications and handle unprecedented data-processing throughput and multimedia performance, without sacrificing the battery life or exceeding the thermal power dissipation envelope. The architecture diagram is shown in Fig. 12.1.1 and the die photo for the quad-core configuration is shown in Fig. 12.1.7.
Keywords :
microprocessor chips; multiprocessing systems; 2-port DRAM controller; ARM-v7A architecture cores; GHz multi-core CPU; Samsung; high-k metal gate application processor; mobile applications; multimedia accelerators; multimedia performance; next-generation dual/quad-core Exynos processor; size 32 nm; thermal power dissipation envelope; Batteries; Central Processing Unit; Graphics processing unit; Logic gates; Random access memory; Temperature sensors; Thermal management;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6176980
