DocumentCode
1664659
Title
Selective-area growth of Ge and Ge/SiGe quantum wells in 3 μm silicon-on-insulator waveguides
Author
Claussen, Stephanie A. ; Balram, Krishna C. ; Fei, Edward T. ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We demonstrate a robust process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 μm thick silicon-on-insulator waveguides, eliminating sidewall growth and hence facilitating low-insertion-loss optical modulators.
Keywords
Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; germanium; optical losses; optical materials; optical waveguides; semiconductor growth; semiconductor quantum wells; silicon-on-insulator; substrates; Ge; Ge-SiGe; Si; low-insertion-loss optical modulators; quantum wells; selective-area growth; silicon-on-insulator waveguides; size 3 mum; substrate preparation process; Epitaxial growth; Fabrication; Modulation; Optical waveguides; Silicon; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326067
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