DocumentCode
1664673
Title
ZnCdSe/ZnCdMgSe quantum well infrared photodetector
Author
Ravikumar, Arvind Pawan ; Alfaro-Martinez, Adrian ; Chen, Guopeng ; Zhao, Kaile ; Tamargo, Maria C. ; Gmachl, Claire ; Shen, Aidong
Author_Institution
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We present the design, fabrication and characterization of a II-VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 μm. Absorption, photocurrent measurements yield results consistent with conventional III-V QWIPs.
Keywords
II-VI semiconductors; cadmium compounds; infrared detectors; infrared spectra; magnesium compounds; optical design techniques; optical fabrication; photoconductivity; photodetectors; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; II-VI quantum well infrared photodetector; ZnCdSe-ZnCdMgSe; absorption spectra; optical design; optical fabrication; photocurrent measurements; quasibound transition; wavelength 8.7 mum; Absorption; Measurement by laser beam; Photoconductivity; Photodetectors; Quantum cascade lasers; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326068
Link To Document