Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

Author

Chen, Baile ; Holmes, A.L., Jr. ; Jiang, W.Y. ; Yuan, Jinrong

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

fYear

2011

Firstpage

203

Lastpage

204

Abstract

In this paper, the transition wavelength and wave function overlap of type-II In_xGa_1-xAs/GaAs_1-ySb_y quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2μm to 4μm can be achieved with a symmetric strain compensated quantum well structure. For these structures, the transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; k.p calculations; optical design techniques; photodiodes; semiconductor quantum wells; wave functions; 4-band k.p Hamiltonian model; In_xGa_1-xAs-GaAs_1-ySb_y; absorption wavelength; mid-infrared photodiodes; quantum well composition; quantum well layer thickness; strain compensated type-II quantum well structures; transition wavelength; wave function; wavelength 2 mum to 4 mum; Absorption; Indium gallium arsenide; Indium phosphide; Photodiodes; Strain; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on

Conference_Location

Rome

ISSN

2158-3234

Print_ISBN

978-1-61284-876-1

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2011.6041114

Filename

6041114