Title :
Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
Author :
Chen, Baile ; Holmes, A.L., Jr. ; Jiang, W.Y. ; Yuan, Jinrong
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
In this paper, the transition wavelength and wave function overlap of type-II InxGa1-xAs/GaAs1-ySby quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2μm to 4μm can be achieved with a symmetric strain compensated quantum well structure. For these structures, the transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; k.p calculations; optical design techniques; photodiodes; semiconductor quantum wells; wave functions; 4-band k.p Hamiltonian model; InxGa1-xAs-GaAs1-ySby; absorption wavelength; mid-infrared photodiodes; quantum well composition; quantum well layer thickness; strain compensated type-II quantum well structures; transition wavelength; wave function; wavelength 2 mum to 4 mum; Absorption; Indium gallium arsenide; Indium phosphide; Photodiodes; Strain; Wave functions;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041114
