DocumentCode
1664724
Title
Dilute-nitride active regions on GaSb for mid-infrared semiconductor diode lasers
Author
Nair, Hari P. ; Crook, Adam M. ; Bank, Seth R.
Author_Institution
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.
Keywords
III-V semiconductors; gallium compounds; infrared sources; optical materials; photoluminescence; semiconductor lasers; GaSb; dilute-nitride active regions; midinfrared semiconductor diode lasers; nonradiative defects; room-temperature photoluminescence; temperature 293 K to 298 K; wavelength 3 mum to 5 mum; Annealing; Diode lasers; Nitrogen; Optical diffraction; Photoluminescence; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326070
Link To Document