Modeling the effects of interface traps on passive quenching of a Ge/Si Geiger mode avalanche photodiode

Author

Hayes, John M. ; Gity, Farzan ; Corbett, Brian ; Morrison, Alan P.

Author_Institution

Photonics Centre, Tyndall Nat. Inst., Cork, Ireland

fYear

2011

Firstpage

205

Lastpage

206

Abstract

The influence of interface donor and acceptor traps on the behavior of Ge/Si separate absorption, charge and multiplication (SACM) Geiger mode avalanche photodiodes (GM-APDs) under passive quenching is modeled. The effects of different trap types on the quenching behavior are investigated in this paper for the first time. Our results show that trap type and trap density significantly influence the APD quenching time and ability to quench for a particular quenching resistor.

Keywords

Ge-Si alloys; avalanche photodiodes; interface states; radiation quenching; semiconductor materials; Ge-Si; Geiger mode avalanche photodiode; interface acceptor traps; interface donor traps; light absorption; passive quenching; quenching resistor; trap density; Avalanche photodiodes; Electric breakdown; Electron traps; Mathematical model; Photonics; Semiconductor process modeling; Silicon; Avalanche photodiode (APD); Geiger mode (GM); germanium; interface trap; passive quenching; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on

Conference_Location

Rome

ISSN

2158-3234

Print_ISBN

978-1-61284-876-1

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2011.6041115

Filename

6041115