• DocumentCode
    1664750
  • Title

    Nanofabrication of quantum dots on InP by in-situ etching and selective growth

  • Author

    Huang, Y. ; Kim, T. ; Garrod, T. ; Mawst, L.J. ; Xiong, S. ; Nealey, P.F. ; Schulte, K. ; Kuech, T.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Diblock copolymer lithography followed by selective growth is used for the nanofabrication of InGaAs quantum dots (QDs) on InP substrate. Stronger photoluminescence intensity is observed when in-situ CBr4 etching is employed prior to QD growth.
  • Keywords
    III-V semiconductors; MOCVD; etching; gallium arsenide; indium compounds; nanofabrication; nanopatterning; photoluminescence; semiconductor growth; semiconductor quantum dots; InGaAs; InP; MOCVD; diblock copolymer lithography; in-situ etching; indium gallium arsenide quantum dots; indium phosphide substrate; metalorganic chemical vapor deposition; nanofabrication; nanopatterning; photoluminescence intensity; selective growth; Etching; Indium phosphide; MOCVD; Optical surface waves; Substrates; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1664750