First investigation of quantum effects in heterojunction solar cells

This paper focuses on the impact of quantum effects in a-Si:H / c-Si heterojunction solar cells simulation. A simulation flow is presented, in which a self-consistent Poisson-Schrödinger approach is coupled with classical physics simulations. It is shown that quantum effects have a significant impact on the calculated charge description at front a-Si:H / c-Si interface and appear mandatory for accurate a-Si:H parameters extraction and confident heterojunction solar cell simulation results.