Title :
Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch
Author :
Araújo, Samuel Vasconcelos ; Zacharias, Peter
Author_Institution :
Centre of Competence for Distrib. Electr. Power Technol., Univ. of Kassel, Kassel, Germany
Abstract :
Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching frequency will be discussed.
Keywords :
MOSFET; invertors; photovoltaic power systems; silicon compounds; wide band gap semiconductors; SiC D-MOSFET; SiC devices; innovative semiconductor technologies; inverter circuit; photovoltaic systems; silicon carbide; switching frequency; Conducting materials; Electron mobility; Gallium nitride; MOSFETs; Photovoltaic systems; Semiconductor materials; Silicon carbide; Solar power generation; Thermal conductivity; Voltage; MOSFET; Photovoltaic; Power semiconductor device; Silicon Carbide; Voltage source inverter (VSI);
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
