Title :
A 28nm 360ps-access-time two-port SRAM with a time-sharing scheme to circumvent read disturbs
Author :
Ishii, Yuichiro ; Tsukamoto, Yasumasa ; Nii, Koji ; Fujiwara, Hidehiro ; Yabuuchi, Makoto ; Tanaka, Koji ; Tanaka, Shinji ; Shimazaki, Yasuhisa
Author_Institution :
Renesas Electron., Tokyo, Japan
Abstract :
With the rapid growth in the market for mobile information terminals such as smart phones and tablets, the performance of image processing engines (e.g., operation speed, accuracy in digital images) has improved remarkably. In these processors, 2-port SRAM (2P-SRAM) macros, in which a read port and a write port are operated synchronously in a single clock cycle, are widely used. Since the 2P-SRAM is placed in front of large scale logic circuitry for image processing, a faster access time (e.g., <;1 ns) is required. In general, the read-out operation in 2P-SRAM utilizes full-swing of the single read bitline (BL), so a drastic improvement of the access time is not expected. On the other hand, the dual-port SRAM (DP-SRAM) makes use of the voltage difference between BL pair in the read-out operation, which is suitable for the high-speed operation. In this study, we present a time-sharing scheme using a DP-SRAM cell to achieve high-speed access in 2P-SRAM macros in such image processors.
Keywords :
SRAM chips; image processing; logic design; two-port networks; 2-port SRAM macros; DP-SRAM cell; access time; access-time two-port SRAM; clock cycle; digital images; dual-port SRAM; high-speed operation; image processing engines; large scale logic circuitry; mobile information terminals; operation speed; read disturbs; read port; read-out operation; single read bitline; size 28 nm; smart phones; tablets; time 360 ps; time-sharing scheme; voltage difference; write port; Circuit stability; Clocks; Delay; Image processing; Random access memory; Solid state circuits; Stability analysis;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6176991