New IGBT Concepts for Consumer Power Applications

Author

Voss, S. ; Hellmund, O. ; Frank, W.

Author_Institution

Infineon Technol. AG, Neubiberg

fYear

2007

Firstpage

1038

Lastpage

1043

Abstract

High voltage IGBTs up to 1500 V are widely used in consumer power applications. The introduction of the FieldStopreg technology in combination with a trench gate structure brought improvements in terms of conduction losses and switching losses. Additionally, the integration of powerful reverse diode structure led to Infineon´s reverse conducting (RC) technology and offers further platform for new IGBT devices. New voltage classes of RC-IGBTs are proposed in this paper, which bring benefits to the application such as low EMI or high efficiency. This paper discusses new devices for soft-switching applications such as induction cooking, microwave ovens and rice cookers in 600 V, 900 V, 1000 V, 1200 V and 1600 V.

Keywords

domestic appliances; insulated gate bipolar transistors; power bipolar transistors; FieldStop technology; RC-IGBT; high voltage IGBT; induction cooking; microwave ovens; powerful reverse diode structure; reverse conducting technology; rice cookers; trench gate structure; voltage 1000 V; voltage 1200 V; voltage 1600 V; voltage 600 V; Capacitance; Capacitors; Circuit topology; Insulated gate bipolar transistors; Light emitting diodes; Low voltage; Microwave ovens; RLC circuits; Switching loss; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

978-1-4244-1259-4

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/07IAS.2007.160

Filename

4347909