DocumentCode :
1665046
Title :
A 1kpixel CMOS camera chip for 25fps real-time terahertz imaging applications
Author :
Sherry, Hani ; Grzyb, Janusz ; Zhao, Yan ; Al Hadi, Richard ; Cathelin, Andreia ; Kaiser, Andreas ; Pfeiffer, Ullrich
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
Firstpage :
252
Lastpage :
254
Abstract :
Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF systems that can achieve high sensitivity and portability at low power consumption levels. In particular, CMOS process technologies are attractive due to their low price tag for industrial, surveillance, scientific, and medical applications. Recently, CMOS-based detectors have shown good sensitivity up to 1THz with NEPs on the order of 66pW/√(Hz) at 1THz [1]. However, CMOS terahertz imagers developed thus far have only operated single detectors based on lock-in measurement techniques to acquire raster-scanned images with frame rates on the order of minutes [2]. To address these impediments, we present a low-power 1kpixel terahertz camera chip fully compliant with an industrial 65nm ft/fmax=160GHz/200GHz CMOS process technology. The active-pixel circuit topology is designed to accommodate the optics for wide bandwidth (0.6 to 1THz) in stand-off detection with a 40dBi Si-lens. It includes row/col select and integrate-and-dump circuitry capable of capturing terahertz images with video frame rates up to 25fps at a power consumption of 2.5μW/pixel.
Keywords :
CMOS image sensors; submillimetre wave measurement; terahertz wave detectors; terahertz wave imaging; 1kpixel CMOS camera chip; CMOS terahertz imagers; CMOS-based detectors; NEP; RF systems; active-pixel circuit topology; frequency 160 GHz; frequency 200 GHz; frequency 300 GHz to 3 THz; integrate-and-dump circuitry; lock-in measurement techniques; low-power 1kpixel terahertz camera chip; power consumption; power consumption levels; raster-scanned images; real-time terahertz imaging applications; Antennas; CMOS integrated circuits; Cameras; Detectors; Lenses; Silicon; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4673-0376-7
Type :
conf
DOI :
10.1109/ISSCC.2012.6176997
Filename :
6176997
Link To Document :
بازگشت