• DocumentCode
    1665123
  • Title

    Demonstration of high temperature operation in 1.3-μm-range metamorphic InGaAs laser

  • Author

    Arai, Masakazu ; Kondo, Yasuhiro ; Kanazawa, Shigeru ; Tadokoro, Takashi ; Kohtoku, Masaki

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 1.3-μm-range metamorphic InGaAs laser with high characteristic temperature (T0 = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser has been achieved by inserting an electron stopper layer in the p-cladding layer.
  • Keywords
    III-V semiconductors; claddings; gallium arsenide; indium compounds; quantum well lasers; InGaAs; characteristic temperature; electron stopper layer; high temperature operation; metamorphic laser; p-cladding layer; temperature 200 degC; temperature 220 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Lasers; Lattices; Substrates; Temperature; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665123