Title :
Demonstration of high temperature operation in 1.3-μm-range metamorphic InGaAs laser
Author :
Arai, Masakazu ; Kondo, Yasuhiro ; Kanazawa, Shigeru ; Tadokoro, Takashi ; Kohtoku, Masaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
A 1.3-μm-range metamorphic InGaAs laser with high characteristic temperature (T0 = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser has been achieved by inserting an electron stopper layer in the p-cladding layer.
Keywords :
III-V semiconductors; claddings; gallium arsenide; indium compounds; quantum well lasers; InGaAs; characteristic temperature; electron stopper layer; high temperature operation; metamorphic laser; p-cladding layer; temperature 200 degC; temperature 220 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Lasers; Lattices; Substrates; Temperature; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
