• DocumentCode
    1665132
  • Title

    Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode

  • Author

    Hardy, Matthew T. ; Hsu, Po S. ; Koslow, Ingrid ; Feezell, Daniel F. ; Nakamura, Shuji ; Speck, James S. ; DenBaars, Steven P.

  • Author_Institution
    Mater. Dept., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (∼ 3%) in the In0.3Ga0.7N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
  • Keywords
    Diode lasers; Fluorescence; Gallium nitride; Semiconductor lasers; Strain; Stress; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665132