DocumentCode :
1665132
Title :
Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode
Author :
Hardy, Matthew T. ; Hsu, Po S. ; Koslow, Ingrid ; Feezell, Daniel F. ; Nakamura, Shuji ; Speck, James S. ; DenBaars, Steven P.
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (∼ 3%) in the In0.3Ga0.7N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
Keywords :
Diode lasers; Fluorescence; Gallium nitride; Semiconductor lasers; Strain; Stress; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326088
Link To Document :
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