Title :
384 nm AlGaN diode lasers on relaxed semipolar buffers
Author :
Haeger, D.A. ; Young, E.C. ; Chung, R.B. ; Wu, F. ; Romanov, A.E. ; Nakamura, S. ; DenBaars, S.P. ; Speck, J.S. ; Cohen, D.A.
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
Keywords :
III-V semiconductors; aluminium compounds; buffer layers; dislocations; gallium compounds; quantum well lasers; ultraviolet sources; wide band gap semiconductors; AlGaN; diode lasers; heterointerfaces; mid-UV lasers; misfit dislocation formation; relaxed semipolar buffer layers; wavelength 384 nm; Aluminum gallium nitride; Gallium nitride; Quantum well devices; Semiconductor lasers; Strain; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
