DocumentCode :
1665296
Title :
Waveguide engineering for hybrid Si / III-V lasers and amplifiers
Author :
Swint, R.B. ; Spector, S.J. ; Chen, C.L. ; Plant, J.J. ; Lyszczarz, T. ; Juodawlkis, P.W.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
Using adiabatic tapers, hybrid silicon / III-V lasers and amplifiers are integrated with conventional thin (t = 0.25 μm) silicon waveguides. Amplifiers have ~12 dB intrachip gain, and similar lasers have thresholds of 35 mA.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; quantum well lasers; semiconductor optical amplifiers; silicon; InGaAsP; Si; adiabatic tapers; current 35 mA; hybrid Si-III-V amplifiers; hybrid silicon-III-V lasers; intrachip gain; silicon waveguides; size 0.25 mum; waveguide engineering; Indexes; Laser modes; Optical fiber amplifiers; Silicon; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326093
Link To Document :
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