Title :
Explorations for high performance SiGe-heterojunction bipolar transistor integration
Author :
Deixler, P. ; Huizing, H.G.A. ; Donkers, J.J.T.M. ; Klootwijk, J.H. ; Hartskeerl, D. ; de Boer, W.B. ; Havens, R.J. ; van der Toorn, R. ; Paasschens, J.C.J. ; Kloosterman, W.J. ; van Berkum, J.G.M. ; Terpstra, D. ; Slotboom, J.W.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
6/23/1905 12:00:00 AM
Abstract :
Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f T=55 GHz and BVCEO=2.7 V. The transistor characteristics are well modeled by Mextram 504
Keywords :
Ge-Si alloys; SPICE; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 2.7 V; 55 GHz; Mextram 504; SPICE model; SiGe; heterojunction bipolar transistor integration; low-complexity integration-scheme; reverse Early effects; stepped box-like base-profile; transistor characteristics; Annealing; Bipolar transistors; Boron; Germanium silicon alloys; Implants; Inductors; Plasma applications; Protection; Silicon germanium; Wet etching;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957851
