Explorations for high performance SiGe-heterojunction bipolar transistor integration

Author

Deixler, P. ; Huizing, H.G.A. ; Donkers, J.J.T.M. ; Klootwijk, J.H. ; Hartskeerl, D. ; de Boer, W.B. ; Havens, R.J. ; van der Toorn, R. ; Paasschens, J.C.J. ; Kloosterman, W.J. ; van Berkum, J.G.M. ; Terpstra, D. ; Slotboom, J.W.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

30

Lastpage

33

Abstract

Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f _T=55 GHz and BV_CEO=2.7 V. The transistor characteristics are well modeled by Mextram 504

Keywords

Ge-Si alloys; SPICE; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 2.7 V; 55 GHz; Mextram 504; SPICE model; SiGe; heterojunction bipolar transistor integration; low-complexity integration-scheme; reverse Early effects; stepped box-like base-profile; transistor characteristics; Annealing; Bipolar transistors; Boron; Germanium silicon alloys; Implants; Inductors; Plasma applications; Protection; Silicon germanium; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957851

Filename

957851