High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

Author

Baudry, H. ; Martinet, B. ; Fellous, C. ; Kermarrec, O. ; Campidelli, Y. ; Laurens, M. ; Marty, M. ; Mourier, J. ; Troillard, G. ; Monroy, A. ; Dutartre, D. ; Bensahel, D. ; Vincent, G. ; Chantre, A.

Author_Institution

Centre Commun. de Microelectronique de Crolles, ST Microelectron., Crolles, France

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

52

Lastpage

55

Abstract

A robust 0.25 μm double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90 GHz f _T/f_max with pure SiGe base in 0.25 μm BiCMOS technology. Performances up to 120/100 GHz f_T/f_max are demonstrated for SiGe:C base transistors

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; vapour phase epitaxial growth; 0.25 micron; 100 GHz; 120 GHz; 70 GHz; 90 GHz; BiCMOS technology; SiGe; SiGe:C; SiGe:C base transistors; high performance HBTs; highly integrated wireless communications circuits; n-type collector epitaxy; nonselective epitaxy; optical communications circuits; robust double-poly SiGe HBT structure; Boron; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Plugs; Silicon germanium; Substrates; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957855

Filename

957855