Characteristics of ultrathin dielectric films (<5 nm) grown or annealed in a nitric oxide ambient using rapid thermal processing

Author

Yao, Z.-Q. ; Harrison, H.B. ; Dimitrijev, S. ; Yeow, Y.T.

Author_Institution

AWA Microelectron., Homebush, NSW, Australia

fYear

1995

Firstpage

93

Lastpage

95

Abstract

In this paper we report on the physical properties, such as thickness measurements and XPS depth profiles, and electrical properties of NO-grown gate dielectrics and compare them with films of similar thicknesses grown in N₂O and O₂. The interface state densities, interface state generation rate during electrical stress, charge trapping properties and stress induced leakage current are presented. In addition, electrical and physical properties of NO-annealed oxides which had an initial oxide and then were annealed in nitric oxide are included

Keywords

CMOS integrated circuits; MOS capacitors; X-ray photoelectron spectra; dielectric thin films; interface states; leakage currents; nitridation; rapid thermal processing; silicon compounds; 5 nm; CMOS devices; I-V characteristics; MOS capacitors; NO ambient; NO-annealed oxides; SiO_xN_y films; SiON; XPS depth profiles; charge trapping properties; electrical properties; electrical stress; interface state densities; interface state generation rate; rapid thermal processing; stress induced leakage current; thickness measurements; ultrathin dielectric films; Australia; Conductive films; Dielectric films; Microelectronics; Nitrogen; Optical films; Rapid thermal annealing; Semiconductor films; Stress measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499640

Filename

499640