Capacitance characteristics of the MOS structure with Fowler-Nordheim tunneling current

Author

He, Yandong ; Xu, Mingzhen ; Tan, Changhua ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Beijing Univ., China

fYear

1995

Firstpage

96

Lastpage

98

Abstract

In this paper, it was noted that the transient C-t characteristics under high gate voltage was different from the normal one under a lower gate voltage, and that the equilibrium capacitance (C-t) decreased when the applied gate voltage increased. Here, we present a new model that is able to explain the phenomena of a pulsed MOS structure with Fowler-Nordheim tunneling current

Keywords

MOS capacitors; capacitance; semiconductor device models; semiconductor device reliability; transient analysis; tunnelling; Fowler-Nordheim tunneling current; MOS structure; Si-SiO₂; capacitance characteristics; equilibrium capacitance; high gate voltage; low gate voltage; model; polysilicon gate MOS capacitor; pulsed MOS structure; reliability; transient C-t characteristics; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Helium; MOS devices; Microelectronics; Nanoscale devices; Power system transients; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499641

Filename

499641