• DocumentCode
    1665488
  • Title

    QUBiC4: a silicon RF-BiCMOS technology for wireless communication ICs

  • Author

    Szmyd, D. ; Brock, R. ; Bell, N. ; Harker, S. ; Patrizi, G. ; Fraser, J. ; Dondero, R.

  • Author_Institution
    Philips Semicond., Albuquerque, NM, USA
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    60
  • Lastpage
    63
  • Abstract
    QUBiC4 is a silicon RF-BiCMOS technology with NPN ft/f max up to 40/100 GHz, 0.25 μm CMOS, high quality passives, and five metal layers for wireless applications. LNA noise figure of 0.99 dB at 2 GHz has been achieved
  • Keywords
    BiCMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; elemental semiconductors; integrated circuit noise; silicon; 0.25 micron; 0.99 dB; 100 GHz; 2 GHz; 40 GHz; CMOS; IC noise; LNA; QUBiC4; RF-BiCMOS technology; Si; metal layers; wireless communication ICs; CMOS process; CMOS technology; Capacitance; Communications technology; Implants; Inductors; Integrated circuit interconnections; Noise figure; Silicon; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-7019-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2001.957857
  • Filename
    957857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665488