Title :
Ionizing radiation effects of mobility in fluorinated NMOSFETs
Author :
Zhang, GUOQIANG ; Yan, RONGLIANG ; Gao, Wenyu ; Ren, DIYUAN ; Zhao, Yuanfu ; Hu, Yuhong
Author_Institution :
Xinjiang Inst. of Phys., Acad. Sinica, Urumqi, China
Abstract :
Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1×1015-1×1016 F/cm2, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width
Keywords :
MOSFET; carrier mobility; gamma-ray effects; interface states; ion implantation; Co-60 radiation response; F dose range; F implantation dose; Si-SiO2:F; carrier mobility; channel width; fluorinated NMOSFETs; fluorinated oxides; interface trap buildup; ionizing radiation effects; radiation induced mobility degradation; Annealing; Density measurement; Ionizing radiation; MOSFET circuits; Microelectronics; Performance evaluation; Physics; Silicon; Testing; Thermal degradation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499642
