• DocumentCode
    1665491
  • Title

    Ionizing radiation effects of mobility in fluorinated NMOSFETs

  • Author

    Zhang, GUOQIANG ; Yan, RONGLIANG ; Gao, Wenyu ; Ren, DIYUAN ; Zhao, Yuanfu ; Hu, Yuhong

  • Author_Institution
    Xinjiang Inst. of Phys., Acad. Sinica, Urumqi, China
  • fYear
    1995
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1×1015-1×1016 F/cm2, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width
  • Keywords
    MOSFET; carrier mobility; gamma-ray effects; interface states; ion implantation; Co-60 radiation response; F dose range; F implantation dose; Si-SiO2:F; carrier mobility; channel width; fluorinated NMOSFETs; fluorinated oxides; interface trap buildup; ionizing radiation effects; radiation induced mobility degradation; Annealing; Density measurement; Ionizing radiation; MOSFET circuits; Microelectronics; Performance evaluation; Physics; Silicon; Testing; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.499642
  • Filename
    499642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665491