Review of low-frequency noise in bipolar transistors over the last decade

Author

Vandamme, L.K.J. ; Trefán, Gy

Author_Institution

Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

68

Lastpage

73

Abstract

Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction transistors (HBTs) and SiGe HBTs are reviewed. The validity of a new empirical relation between the 1/f noise corner frequency f_c (the frequency where the 1/f noise and shot noise are equal) and the cutoff frequency f_T is investigated. The coherence-method to investigate the most dominant low-frequency noise source in the equivalent circuit is described

Keywords

1/f noise; bipolar transistors; equivalent circuits; semiconductor device noise; shot noise; 1/f noise corner frequency; Si; SiGe; bipolar junction transistors; coherence-method; cutoff frequency; equivalent circuit; hetero-junction transistors; low-frequency noise; polysilicon emitter; shot noise; Bipolar transistors; Circuit noise; Cutoff frequency; Equivalent circuits; Fluctuations; Low-frequency noise; Noise generators; Phase noise; Semiconductor device noise; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957859

Filename

957859