Title :
Review of low-frequency noise in bipolar transistors over the last decade
Author :
Vandamme, L.K.J. ; Trefán, Gy
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
6/23/1905 12:00:00 AM
Abstract :
Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction transistors (HBTs) and SiGe HBTs are reviewed. The validity of a new empirical relation between the 1/f noise corner frequency fc (the frequency where the 1/f noise and shot noise are equal) and the cutoff frequency fT is investigated. The coherence-method to investigate the most dominant low-frequency noise source in the equivalent circuit is described
Keywords :
1/f noise; bipolar transistors; equivalent circuits; semiconductor device noise; shot noise; 1/f noise corner frequency; Si; SiGe; bipolar junction transistors; coherence-method; cutoff frequency; equivalent circuit; hetero-junction transistors; low-frequency noise; polysilicon emitter; shot noise; Bipolar transistors; Circuit noise; Cutoff frequency; Equivalent circuits; Fluctuations; Low-frequency noise; Noise generators; Phase noise; Semiconductor device noise; Semiconductor diodes;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957859
