Title :
Simulation studies of persistent photoconductivity, filamentary conduction and optical pulse positioning on the high voltage response of semi-insulating GaAs photoconductive switches
Author :
Joshi, R.P. ; Kayasit, P. ; Islam, N. ; Schamilogu, E. ; Fleddermann, C.B. ; Schoenberg, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
Abstract :
A self-consistent, two-dimensional, time-dependent, drift-diffusion model is developed to simulate the response of high power photoconductive switches. Effects of spatial inhomogeneities associated with the contact barrier potential are shown to foster filamentation. Results of the dark current match available experiments. Persistent photoconductivity is shown to arise at high bias even under conditions of spatial uniformity. Filamentary currents require an inherent spatial inhomogeneity, and are more likely to occur for low optical excitation. Finally, it is shown that the switch response can be varied by changing the spatial position of the optical excitation pulse.
Keywords :
III-V semiconductors; diffusion; gallium arsenide; optical pulse generation; photoconducting switches; photoconductivity; pulsed power switches; GaAs; contact barrier potential; dark current; drift-diffusion model; filamentary conduction; high power photoconductive switches response; high voltage response; inherent spatial inhomogeneity; low optical excitation; optical excitation pulse; optical pulse positioning; persistent photoconductivity; semi-insulating GaAs photoconductive switches; spatial inhomogeneities; Computational modeling; Gallium arsenide; Impact ionization; Nonlinear optics; Optical pulses; Optical switches; Photoconductivity; Power semiconductor switches; Radiative recombination; Voltage;
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
DOI :
10.1109/PPC.1999.825473