Design of 200 GHz SiGe HBT´s

Author

van den Oever, L.C.M. ; Nanver, L.K. ; Slotboom, J.W.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

78

Lastpage

81

Abstract

In this paper the high-frequency capability of SiGe HBT´s is examined by using 1-dimensional device simulations in MEDIC. SiGe HBT´s with f_T=200 GHz for BV_CE0=1.7 V and R_B=2 kΩ/sq are demonstrated in simulations that include non-local avalanche multiplication in the collector and an optimization strategy for the E-B-C profile

Keywords

Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; 1.7 V; 1D device simulations; 200 GHz; E-B-C profile; MEDIC; MM-wave HBT; SiGe; SiGe HBTs; SiGe heterojunction; collector current; high collector doping levels; high-frequency capability; nonlocal avalanche multiplication; optimization strategy; Distributed control; Doping; Electronic components; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Radio frequency; Semiconductor materials; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957861

Filename

957861