Title :
Design of 200 GHz SiGe HBT´s
Author :
van den Oever, L.C.M. ; Nanver, L.K. ; Slotboom, J.W.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
fDate :
6/23/1905 12:00:00 AM
Abstract :
In this paper the high-frequency capability of SiGe HBT´s is examined by using 1-dimensional device simulations in MEDIC. SiGe HBT´s with fT=200 GHz for BVCE0=1.7 V and RB=2 kΩ/sq are demonstrated in simulations that include non-local avalanche multiplication in the collector and an optimization strategy for the E-B-C profile
Keywords :
Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; 1.7 V; 1D device simulations; 200 GHz; E-B-C profile; MEDIC; MM-wave HBT; SiGe; SiGe HBTs; SiGe heterojunction; collector current; high collector doping levels; high-frequency capability; nonlocal avalanche multiplication; optimization strategy; Distributed control; Doping; Electronic components; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Radio frequency; Semiconductor materials; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957861
