Title :
SiGe-HBT active receive mixers for basestation applications
Author_Institution :
Stanford Microdevices, Kanata, Ont., Canada
fDate :
6/23/1905 12:00:00 AM
Abstract :
In basestation applications, receive mixers must achieve superior intermodulation and noise performance simultaneously. Active SiGe mixers are described in this paper with 11 dB of conversion gain (CG) and input third order intercept, IIP3=+20 dBm, noise figure (NF)=15 dB at 1 GHz, and IIP3=+17 dBm, NF=14 dB at 2 GHz
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit noise; intermodulation; semiconductor materials; transceivers; 1 GHz; 11 dB; 14 dB; 15 dB; 2 GHz; Atmel SiGe process; RFIC; SiGe; SiGe HBT mixers; active receive mixers; basestation applications; double-balanced Gilbert cell topology; downconversion mixer; intermodulation performance; noise performance; transceiver applications; Broadband amplifiers; Noise figure; Palladium; Performance loss; RF signals; Radio frequency; SAW filters; Silicon germanium; Surface acoustic waves; Topology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957864
