Title :
Thermal resistance in Si1-xGex HBTs on bulk-Si and SOI substrates
Author :
Palestri, P. ; Pacelli, A. ; Mastrapasqua, M.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
We present a characterization of self-heating in a 0.25 μm SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device metallisation; semiconductor materials; silicon-on-insulator; thermal resistance; 0.25 micron; BiCMOS technology; SOI substrate; Si; Si1-xGex HBT; SiGe; bulk Si substrate; emitter fingers; metallization; self-heating; thermal coupling; thermal resistance; Electrical resistance measurement; Fingers; Heterojunction bipolar transistors; Power dissipation; Silicon; Surface resistance; Temperature; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957866
