DocumentCode
1665786
Title
Development of a high voltage deep trench environment for a Smart Power Technology
Author
Knaipp, Martin ; Stueckler, Ewald ; Bissmann, Werner
Author_Institution
Austriamicrosystems, Styria, Austria
fYear
2009
Firstpage
1
Lastpage
9
Abstract
This paper describes a deep trench module development for a smart power technology by introducing a lateral dielectric isolation. The approach to introduce the new isolation type in a modular way has impact on the process development and the layout environment. The work describes the advantages and the limitations of the new isolation type which results in a new way of product layouting.
Keywords
integrated circuit layout; isolation technology; power integrated circuits; CMOS; high voltage IC; high voltage deep trench environment; lateral dielectric isolation; lateral smart power trench isolation; product layouting; smart power technology; CMOS technology; Dielectric substrates; Dielectrics and electrical insulation; Etching; Isolation technology; Leakage current; Robustness; Silicon; Uniform resource locators; Voltage; High Voltage IC´s 2; Insulation 3; Smart Power 1;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5278943
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